The Effect of Dose Rate and Implant Temperature on Transient Enhanced Diffusion

نویسندگان

  • K. S. JONES
  • J. CHEN
  • S. BHARATAN
  • J. JACKSON
  • L. RUBIN
  • D. VENABLES
چکیده

Low energy boron ion implantation without preamorphization is becoming a viable option for forming shallow p+ junctions in ultra large scale integration (ULSI) devices. Pre-amorphization is often used to reduce the random channeling tail that occurs for non-amorphized boron implants. Current et al. showed results that suggested below 2 keV boron implants K.S. JONES, J. CHEN, S. BHARATAN, J. JACKSON,* L. RUBIN,* M. PUGA-LAMBERS,† and D. VENABLES‡

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تاریخ انتشار 1998